DTB114EK Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
DTB114EK Datasheet PDF : 8 Pages
| |||
DTB114EK
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol
Values
Unit
VCC
-50
V
VIN
-40 to 10
V
IC(MAX)*1
-500
mA
PD*2
200
mW
Tj
150
℃
Tstg
-55 to +150
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
VI(off) VCC = -5V, IO = -100μA -
- -0.5
V
VI(on) VO = -0.3V, IO = -10mA -3.0
-
-
VO(on) IO = -50mA, II = -2.5mA - -100 -300 mV
II VI = -5V
-
- -880 μA
IO(off) VCC = -50V, VI = 0V
-
- -500 nA
GI*3 VO = -5V, IO = -50mA
56
-
-
-
R1
-
7 10 13 kΩ
R2/R1
-
0.8 1.0 1.2 -
Transition frequency
f
*1
T
VCE = -10V, IE = 50mA,
f = 100MHz
-
200
-
MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.
*3 Pulsed
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/5
20160208 - Rev.002
Share Link: 