MJE700 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

MJE700

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

MJE700

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC=-50mA; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-1.5A; IB= -30mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB=B -40mA

VBE(on)-1 Base-Emitter On Voltage

IC= -1.5A; VCE= -3V

VBE(on)-2 Base-Emitter On Voltage

IC= -4A; VCE= -3V

ICEO

Collector Cutoff Current

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCE=-60V; IB=B 0

VCB=-60V; IE= 0

VCB=-60V; IE= 0;TC= 100℃

VEB=-5V; IC= 0

hFE-1

DC Current Gain

IC=- 1.5 A ; VCE= -3V

hFE-2

DC Current Gain

IC= -4A ; VCE= -3V

MIN MAX UNIT

-60

V

-2.5

V

-3.0

V

-2.5

V

-3.0

V

-0.1

mA

-0.1

-0.5

mA

-2.0

mA

750

100

isc Website：www.iscsemi.cn

Share Link: