MJE700 Ver la hoja de datos (PDF) - Inchange Semiconductor

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componentes Descripción

Fabricante

MJE700

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

MJE700

DESCRIPTION

·Collector–Emitter Breakdown Voltage—

: V(BR)CEO =-60 V

·DC Current Gain—

: hFE = 750(Min) @ IC=-1.5 A

·Complement to Type MJE800

APPLICATIONS

·Designed for general-purpose amplifier and low-speed

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-4

A

IBB

Base Current

Collector Power Dissipation

PC

TC=25℃

Ti

Junction Temperature

Tstg

Storage Temperature Range

-0.1

A

40

W

150

℃

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Thermal Resistance, Junction to Case 3.13 ℃/W

isc Website：www.iscsemi.cn

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