MJE801 Ver la hoja de datos (PDF) - Central Semiconductor
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MJE801 Datasheet PDF : 2 Pages
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MJE700 THRU MJE703 PNP
MJE800 THRU MJE803 NPN
COMPLEMENTARY
POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MJE700, MJE800
series devices are medium power complementary
silicon Darlington transistors designed for audio amplifier
applications as complementary output devices.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
ΘJC
MJE700
MJE701
MJE800
MJE801
60
MJE702
MJE703
MJE802
MJE803
80
60
80
5.0
4.0
100
40
-65 to +150
3.13
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICBO
VCB=Rated VCBO, TC=100°C
ICEO
VCE=Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=50mA (MJE702,703,802,803)
80
BVCEO
IC=50mA (MJE700,701,800,801)
60
VCE(SAT) IC=1.5A, IB=30mA (MJE700,702,800,802)
VCE(SAT) IC=2.0A, IB=40mA (MJE701,703,801,803)
VCE(SAT) IC=4.0A, IB=40mA
VBE(ON)
VCE=3.0V, IC=1.5A (MJE700,702,800,802)
VBE(ON)
VCE=3.0V, IC=2.0A (MJE701,703,801,803)
VBE(ON)
VCE=3.0V, IC=4.0A
hFE
VCE=3.0V, IC=1.5A (MJE700,702,800,802) 750
hFE
VCE=3.0V, IC=2.0A (MJE701,703,801,803) 750
hFE
VCE=3.0V, IC=4.0A
100
fT
VCE=3.0V, IC=1.5A, f=1.0MHz
1.0
MAX
100
500
100
2.0
2.5
2.8
3.0
2.5
2.5
3.0
UNITS
V
V
V
A
mA
W
°C
°C/W
UNITS
μA
μA
μA
mA
V
V
V
V
V
V
V
V
MHz
R2 (23-January 2014)
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