MPSA13 Ver la hoja de datos (PDF) - New Jersey Semiconductor

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componentes Descripción

Fabricante

MPSA13

Darlington Transistors

New Jersey Semiconductor 

^£.mi-Con<iuctoi ^Pioau.cii, Line.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.SA

Darlington Transistors

NPN Silicon

COLLECTOR 3

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

MPSA13

MPSA14*

EMITTER 1

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector -Base Voltage

Emitter- Base Voltage

Collector Current — Continuous

Total Device Dissipation @ TA = 25°C

Derate above 25°C

Symbol

VCES

VCBO

VEBO

|c

PD

Value

30

30

10

500

625

5.0

Unit

Vdc

Vdc

Vdc

mAdc

mW

mW/"C

Total Device Dissipation @ TQ = 25°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

PD

Tj. Tstg

1.5

12

-55 to +150

Watts

mW/uC

°c

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RSJA

200

Thermal Resistance, Junction to Case

RGJC

83.3

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

"C/W

c/w

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(|Q= 100nAdc, 16 = 0)

Collector Cutoff Current

(VCB= 30 Vdc. IE = 0)

Emitter Cutoff Current

(VEB=10Vdc, IC =0)

Symbol

V(BR)CES

'CBO

'EBO

TO-92

Mm

Max

Unit

30

—

Vdc

—

100

nAdc

—

100

nAdc

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at Ihe time of going

to press. However, NJ Semi-Conductnrs assumes no responsibility for any errors or omissions discovered in its use.

\ Senii-Conductors encournges customers to verify that datasheets are current before placing orders.

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