BC856A Ver la hoja de datos (PDF) - Olitech Electronics Co.Ltd
Número de pieza
componentes Descripción
Fabricante
BC856A Datasheet PDF : 3 Pages
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ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter
unless otherwise specified)
Symbol Test
Plastic-Encapsulate Transistors
conditions
Min Max Unit
Collector-base breakdown voltage BC856
-80
BC857
VCBO IC= -10μA, IE=0
-50
V
BC858
-30
Collector-emitter breakdown voltage BC856
-65
BC857
VCEO IC= -10mA, IB=0
-45
V
BC858
-30
Emitter-base breakdown voltage
VEBO IE= -1μA, IC=0
-5
V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
BC856
BC857
BC858
BC856
BC857
BC858
ICBO
ICEO
IEBO
VCB= -70 V , IE=0
VCB= -45 V , IE=0
VCB= -25 V , IE=0
VCE= -60 V , IB=0
VCE= -40 V , IB=0
VCE= -25 V , IB=0
VEB= -5 V , IC=0
-0.1 μA
-0.1 μA
-0.1 μA
DC current gain
BC856A, 857A,858A
BC856B, 857B,858B
BC857C,BC858C
Collector-emitter saturation voltage
125
250
hFE VCE= -5V, IC= -2mA
220
475
420
800
VCE(sat) IC=-100mA, IB= -5 mA
-0.5
V
Base-emitter saturation voltage
VBE(sat) IC= -100mA, IB= -5mA
-1.1
V
Transition frequency
Collector capacitance
fT
VCE= -5 V, IC= -10mA
100
MHz
f=100MHz
Cob VCB=-10V, f=1MHz
4.5
pF
BC856A/B
BC857A/B/C Typical Characteristics
BC858A/B/C
OLITECH ELECTRONICS CO. LTD.
Page:P3-P2
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