BD912 Ver la hoja de datos (PDF) - Comset Semiconductors
Número de pieza
componentes Descripción
Fabricante
BD912 Datasheet PDF : 3 Pages
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PNP BD912
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ICEO
Collector Cutoff Current -VCE=50 V, IB=0V
-
-
-1 mA
-VCB=100 V, IE=0V
-
- -0.5
ICBO
Collector Cutoff Current
mA
-VCB=100 V, IE=0V, Tj=150°C
-5
IEBO
Emitter Cutoff Current
-VBE=5 V, IC=0
-
-
-1 mA
VCEO
Collector Emitter
Breakdown Voltage
IC=10 m A, IB=0V
VBE
Base Emitter Voltage (*) -IC=5 A, -VCE=4 V
-IC=0.5 A, -VCE=4 V
hFE
-VCE(SAT)
-VBE(SAT)
DC Current Gain (*)
-IC=5 A, -VCE=4V
-IC=10 A, -VCE=4V
Collector-Emitter saturation -IC=5 A, -IB=0.5 A
Voltage (*)
-IC=10A, -IB=2.5 A
Base-Emitter saturation
Voltage (*)
-IC=10A, -IB=2.5 A
fT
Transition frequency
-IC=0.5 A, -VCE=4 V
(*) Pulse conditions : tp < 300 µs, δ =1.5%
-100 -
-
V
-
- -1.5 V
40 - 250
15 - -150 -
5
-
-
-
-
1
-
-
3
V
-
- 2.5
3
-
- MHz
23/10/2012
COMSET SEMICONDUCTORS
3/3
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