S3AHR6G Ver la hoja de datos (PDF) - Taiwan Memory Technology
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S3AHR6G Datasheet PDF : 4 Pages
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FIG. 5 TYPICAL JUNCTION CAPACITANCE
100
S3A - S3M
Taiwan Semiconductor
10
f=1.0MHz
Vsig=50mVp-p
1
0.01
0.1
1
10
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
DO-214AB (SMC)
100
DIM.
A
B
C
D
E
F
G
H
Unit (mm)
Min Max
2.90 3.20
6.60 7.11
5.59 6.22
2.00 2.62
1.00 1.60
7.75 8.13
0.10 0.20
0.15 0.31
Unit (inch)
Min Max
0.114 0.126
0.260 0.280
0.220 0.245
0.079 0.103
0.039 0.063
0.305 0.320
0.004 0.008
0.006 0.012
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
P/N
G
YW
F
Symbol
A
B
C
D
E
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Unit (mm)
3.3
2.5
6.8
4.4
9.4
Unit (inch)
0.130
0.098
0.268
0.173
0.370
Document Number: DS_D1410016
Version: K15
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