MPSA93 Ver la hoja de datos (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

Número de pieza

componentes Descripción

Fabricante

MPSA93

TRANSISTOR (PNP)

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

MPSA93

MPSA93 TRANSISTOR (PNP)

D FEATURES

T Power dissipation

.,L PCM:

0.625 W (Tamb=25℃)

Collector current

ICM:

-0.5

A

O Collector-base voltage

V(BR)CBO:

-200 V

C Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

TO-92

1. EMITTER

2. BASE

3. COLLECTOR

123

IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

N Parameter

Collector-base breakdown voltage

O Collector-emitter breakdown voltage

R Emitter-base breakdown voltage

T Collector cut-off current

C Emitter cut-off current

E DC current gain

EL Collector-emitter saturation voltage

Base-emitter saturation voltage

J Transition frequency

Symbol

V(BR)CBO

V(BR)CEO*

V(BR)EBO

ICBO

IEBO

hFE*

VCE(sat) *

VBE(sat) *

fT

Test conditions

Ic= -100µA, IE=0

IC= -1mA , IB=0

IE= -100µA, IC=0

VCB= -160V, IE=0

VEB= -3V, IC=0

VCE=-10V, IC= -1mA

VCE=-10V, IC= -10mA

VCE=-10V, IC= -30mA

IC= -20mA, IB= -2mA

IC= -20mA, IB= -2mA

VCE=-20V, IC= -10mA

f =100MHz

MIN

-200

-200

-5

25

40

25

50

TYP MAX UNIT

V

V

V

-0.25

uA

-0.1

uA

-0.4

V

-0.9

V

MHz

WE* Pulse test: Pulse width≤300µs, Duty cycle≤2%.

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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