MPSA93 Ver la hoja de datos (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

Número de pieza

componentes Descripción

Fabricante

MPSA93

TO-92 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

MPSA93 TRANSISTOR (PNP)

FEATURES

z General Purpose Amplifier

TO – 92

1.EMITTER

2.BASE

3.COLLECTOR

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

-200

-200

-5

-0.5

625

200

150

-55~+150

Unit

V

V

V

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min Typ Max Unit

Collector-base breakdown voltage

V(BR)CBO IC= -0.1mA,IE=0

-200

V

Collector-emitter breakdown voltage

V(BR)CEO * IC=-1mA,IB=0

-200

V

Emitter-base breakdown voltage

V(BR)EBO IE=-0.1mA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-160V,IE=0

-0.25 μA

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

IEBO

hFE(1) *

hFE(2)*

hFE(3)*

VCE(sat) *

VBE(sat) *

VEB=-3V,IC=0

VCE=-10V, IC=-1mA

VCE=-10V, IC=-10mA

VCE=-10V, IC=-30mA

IC=-20mA,IB=-2mA

IC=-20mA,IB=-2mA

-0.1

mA

25

40

25

-0.4

V

-0.9

V

Transition frequency

fT

VCE=-20V,IC=-10mA,f=100MHz

50

MHz

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

www.cj-elec.com

1

','HF,2015

Share Link: