LL4148_04 Ver la hoja de datos (PDF) - Vishay Semiconductors

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componentes Descripción

Fabricante

LL4148_04

Fast Switching Diode

Vishay Semiconductors 

LL4148 / LL4448

Vishay Semiconductors

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Min

Forward voltage

Reverse current

Breakdown voltage

Diode capacitance

Rectification efficiency

Reverse recovery time

IF = 5 mA

IF = 50 mA

IF = 100 mA

VR = 20 V

VR = 20 V, Tj = 150 °C

VR = 75 V

IR = 100 µA, tp/T = 0.01,

tp = 0.3 ms

VR = 0, f = 1MHz, VHF = 50 mV

VHF = 2 V, f = 100 MHz

IF = IR = 10 mA,

iR = 1 mA

IF = 10 mA, VR = 6 V,

iR = 0.1 x IR, RL = 100 Ω

VF

VF

VF

IR

IR

IR

V(BR)

CD

ηr

trr

trr

0.62

100

45

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

1000

100

LL4148

1000

100

LL4448

Scattering Limit

10

10

VISHAY

Typ.

Max

Unit

0.72

V

0.86

1

V

0.93

1

V

25

nA

50

µA

5

µA

V

4

pF

%

8

ns

4

ns

Scattering Limit

1

0.1

0

94 9096

Tj = 25 ° C

0.4 0.8 1.2 1.6 2.0

VF - Forward Voltage ( V )

Fig. 1 Forward Current vs. Forward Voltage

1

0.1

0

94 9097

Tj = 25 ° C

0.4 0.8 1.2 1.6 2.0

VF - Forward Voltage ( V )

Fig. 2 Forward Current vs. Forward Voltage

www.vishay.com

2

Document Number 85557

Rev. 1.7, 06-Feb-04

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