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Fabricante

BD242

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

BD242/A/B/C

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BD242

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

BD242A

BD242B

IC= -30mA ;IB= 0

BD242C

VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.6A

VBE(on) Base-Emitter On Voltage

IC= -3A ; VCE= -4V

BD242

VCE= -45V; VBE= 0

ICES

Collector

Cutoff Current

BD242A

BD242B

VCE= -60V; VBE= 0

VCE= -80V; VBE= 0

BD242C

VCE= -100V; VBE= 0

ICEO

Collector

Cutoff Current

BD242/A

VCE= -30V;IB= 0

BD242B/C VCE= -60V;IB= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -1A ; VCE= -4V

hFE-2

DC Current Gain

IC= -3A ; VCE= -4V

fT

Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V, ftest= 1.0MHz

MIN MAX UNIT

-45

-60

V

-80

-100

-1.2

V

-1.8

V

-0.2 mA

-0.3 mA

-1.0 mA

25

10

3.0

MHz

isc website：www.iscsemi.com

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