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Número de pieza

componentes Descripción

Fabricante

BF550

PNP Silicon RF Transistor

Infineon Technologies 

BF 550

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-base breakdown voltage

IC = 10 µA, IE = 0

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

Collector cutoff current

VCB = 30 V, IE = 0

DC current gain

IC = 1 mA, VCE = 10 V

Base-emitter voltage

IC = 1 mA, VCE = 10 V

AC Characteristics

Transition frequency

IC = 1 mA, VCE = 10 V, f = 100 MHz

Collector-base capacitance

VCB = 10 V, VBE = 0 V, f = 1 MHz

Collector-emitter capacitance

VCE = 10 V, VBE = 0 V, f = 1 MHz

Noise figure

VCE = 10 V

IC = 1 mA, f = 100 kHz, RS = 300 Ω

IC = 2 mA, f = 100 MHz, RS = 60 Ω

Y parameters, common emitter

IC = 1 mA, VCE = 10 V

f = 0.45 … 10 MHz

f = 500 kHz

f = 10 MHz

Symbol

Values

Unit

min. typ. max.

V(BR) CE0 40

V(BR) CB0 40

V(BR) EB0 4

ICB0

–

hFE

50

VBE

–

–

–

V

–

–

–

–

–

100 nA

–

250 –

0.72 –

V

fT

–

350 –

MHz

Ccb

–

0.33 –

pF

Cce

–

0.67 –

F

dB

–

2

–

–

3.4 –

g11e

–

C11e

–

I y21e I –

C22e

–

g22e

–

g22e

–

550 –

µS

17 –

pF

35 –

mS

1.3 –

pF

5

8

µS

5

10

µS

Semiconductor Group

2

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