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BF550 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza
componentes Descripción
Fabricante
BF550
Infineon
Infineon Technologies Infineon
BF550 Datasheet PDF : 5 Pages
1 2 3 4 5
PNP Silicon RF Transistor
q For common emitter amplifier stages
up to 300 MHz
q For mixer applications in AM/FM radios
and VHF TV tuners
q Low feedback capacitance
due to shield diffusion
q Controlled low output conductance
BF 550
Type
BF 550
Marking
LA
Ordering Code
(tape and reel)
Q62702-F944
Pin Configuration
1
2
3
B
E
C
Package1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TA 25 ˚C
Junction temperature
Storage temperature range
Symbol
VCE0
VCB0
VEB0
IC
IB
Ptot
Tj
Tstg
Values
Unit
40
V
40
4
25
mA
5
280
mW
150
˚C
– 65 … + 150
Thermal Resistance
Junction - ambient2)
Rth JA
450
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
07.94

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