IXTY01N100D(2017) Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza

componentes Descripción

Fabricante

IXTY01N100D
(Rev.:2017)

High Voltage Power MOSFET

IXYS CORPORATION 

Fig. 7. RDS(on) Normalized to ID = 50mA Value

vs. Drain Current

5

VGS = 0V

5V

4

3

TJ = 125oC

2

IXTY01N100D IXTU01N100D

IXTP01N100D

250

VDS = 100V

200

Fig. 8. Input Admittance

150

TJ = 125oC

25oC

- 40oC

100

1

TJ = 25oC

0

0 100 200 300 400 500 600 700 800 900 1000

ID - MilliAmperes

Fig. 9. Transconductance

350

VDS = 100V

TJ = - 40oC

300

250

25oC

125oC

200

150

100

50

0

0

50

100

150

200

250

ID - MilliAmperes

50

0

-3.5

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5

VGS - Volts

Fig. 10. Forward Voltage Drop of Intrinsic Diode

300

VGS = -10V

250

200

150

TJ = 125oC

TJ = 25oC

100

50

0

0.3

0.4

0.5

0.6

0.7

0.8

0.9

VSD - Volts

1,000

f = 1 MHz

100

Fig. 11. Capacitance

Ciss

5

4

VDS = 500V

I D = 50mA

3

I G = 1mA

2

1

Fig. 12. Gate Charge

0

Coss

-1

10

-2

-3

Crss

-4

1

-5

0

5

10

15

20

25

30

35

40

0

1

2

3

4

5

6

VDS - Volts

QG - NanoCoulombs

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

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