IXTP01N100D(2001) Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXTP01N100D Datasheet PDF : 2 Pages
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Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
RthJC
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 50 V; ID = ID25
Note 1
VGS = -10 V, VDS = 25 V, f = 1 MHz
Vgs = 0 V, to -10 V, ID = 50 mA
Vds = 100 V
RG = 30Ω, (External)
100 150
120
15
3
8
6
30
51
mS
pF
pF
pF
ns
ns
ns
ns
5 K/W
IXTP 01N100D
TO-220 AD Dimensions
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Bottom Side
Source-Drain Diode
Symbol
Test Conditions
VSD
VGS = -10 V, IF = ID25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Note 1
1.0 1.5 V
t
rr
IF = 0.75 A, -di/dt = 10 A/µs,
VDS = 25 V, VGS = -10V
1.5 µs
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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