FDR6674A Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

Fabricante

FDR6674A

30V N-Channel PowerTrench® MOSFET

Fairchild Semiconductor 

April 2001

FDR6674A

30V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

“low side” synchronous rectifier operation, providing an

extremely low RDS(ON) in a small package.

Applications

• Synchronous rectifier

• DC/DC converter

Features

• 11.5 A, 30 V. RDS(ON) = 9.5 mΩ @ VGS = 4.5 V

RDS(ON) = 8.5 mΩ @ VGS = 10 V

• High performance trench technology for extremely

low RDS(ON)

• High power and current handling capability in a

smaller footprint than SO8

S

D

D

S

G

D

TM

SuperSOT -8

D

D

5

4

6

3

7

2

8

1

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

VDSS

VGSS

ID

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

PD

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

.6674A

FDR6674A

13’’

Ratings

30

±12

11.5

50

1.8

1.0

0.9

-55 to +150

70

20

Tape width

12mm

Units

V

V

A

W

°C

°C/W

°C/W

Quantity

2500 units

2000 Fairchild Semiconductor Corporation

FDR6674A Rev D(W)

Share Link: