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BD909 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
BD909 Datasheet PDF : 6 Pages
1 2 3 4 5 6
BD909 / BD910 / BD911 / BD912
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.4
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l
Pa ram et e r
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
for BD909/910
for BD911/912
Tcase = 150 oC
for BD909/910
for BD911/912
VCB = 80 V
VCB = 100 V
VCB = 80 V
VCB = 100 V
ICEO
Collector Cut-off
Current (IB = 0)
for BD909/910
for BD911/912
VCE = 40 V
VCE = 50 V
IEBO Emitter Cut-off Current
(IC = 0)
VCEO(s us)Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 100 mA
IC = 5 A
IC = 10 A
for BD909/910
for BD911/912
IB = 0.5 A
IB = 2.5 A
VBE(sat)Base-Emitter
Saturation Voltage
IC = 10 A
IB = 2.5 A
VBEBase-Emitter Voltage IC = 5 A
VCE = 4 V
hFEDC Current Gain
IC = 0.5 A
IC = 5 A
IC = 10 A
VCE = 4 V
VCE = 4 V
VCE = 4 V
fT
Transition frequency IC = 0. 5 A
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
VCE = 4 V
Min. Typ.
80
100
40
15
5
3
Max.
500
500
5
5
1
1
1
1
3
2.5
1.5
250
150
Unit
µA
µA
mA
mA
mA
mA
mA
V
V
V
V
V
V
MHz
Safe Operating Area
Derating Curves
2/6

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