2SD1421 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SD1421

Silicon NPN Epitaxial

Renesas Electronics 

2SD1421

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

180

—

—

V IC = 1 mA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO 160

—

—

V IC = 10 mA, RBE = ∞

Emitter to base breakdown voltage

V(BR)EBO

5

—

—

V IE = 1 mA, IC = 0

Collector cutoff current

DC current transfer ratio

ICBO

—

—

10

µA VCB = 160 V, IE = 0

hFE1*1

60

—

200

VCE = 5 V, IC = 0.15 A

hFE2

30

—

—

VCE = 5 V, IC = 0.5 A

Collector to emitter saturation voltage

VCE(sat)

—

—

1.0

V IC = 0.5 A, IB = 50 mA, Pulse

Base to emitter voltage

VBE

—

—

0.9

V VCE = 5 V, IC = 0.15 A, Pulse

Note: 1. The 2SD1421 is grouped by hFE1 as follows.

Mark

ED

EE

hFE1

60 to 120 100 to 200

Rev.2.00 Aug 10, 2005 page 2 of 5

Share Link: