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Fabricante

PN2907A

60 V PNP General Purpose Transistor

Fairchild Semiconductor 

Electrical Characteristics(4)

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Test Condition

Off Characteristics

V(BR)CEO Collector-Emitter Breakdown Voltage(5)

V(BR)CBO Collector-Base Breakdown Voltage

V(BR)EBO Emitter-Base Breakdown Voltage

IB

Base Cut-Off Current

ICEX Collector Cut-Off Current

ICBO Collector Cut-Off Current

On Characteristics

IDSS DC Current Gain

IDSS Collector-Emitter Saturation Voltage(5)

IDSS Base-Emitter Saturation Voltage

Small Signal Characteristics

fT

Current Gain-Bandwidth Product

Cobo Output Capacitance

Cibo Input Capacitance

IC = 1.0 mA, IB = 0

IC = 10 μA, IE = 0

IE = 10 μA, IC = 0

VCB = 30 V, VEB = 0.5 V

VCE = 30 V, VBE = 0.5 V

VCE = 50 V, IE = 0

VCB = 50 V, IE = 0,

TA =150°C

IC = 0.1 mA, VCE = 10 V

IC = 1.0 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V

IC = 150 mA, VCE = 10 V(5)

IC = 500 mA, VCE = 10 V(5)

IC = 150 mA, VCE = 15 V

IC = 500 mA, VCE = 50 V

IC = 150 mA, VCE = 15 V(5)

IC = 500 mA, VCE = 50 V

IC = 50 mA, VCE = 20 V,

f = 100 MHz

VCB = 10 V, IE = 0,

f = 100 kHz

VEB = 2.0 V, IC = 0,

f = 100 kHz

Switching Characteristics

ton

Turn-on Time

td

Delay

tr

Rise Time

toff

Turn-off Time

ts

Storage Time

tf

Fall Time

VCC = 32 V, IC = 150 mA,

IB1 = 15 mA

VCC = 6.0 V, IC = 150 mA,

IB1 = IB2 = 15mA

Notes:

4. All voltages (V) and currents (A) are negative polarity for PNP transistors.

5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%

Min.

-60

-60

-5.0

-75

-100

-100

-100

-50

200

Max. Units

V

V

V

-50

nA

-50

nA

-0.02

μA

-20

μA

-300

-0.4

V

-1.6

V

-1.3

V

-2.6

V

MHz

-8.0

pF

-30

pF

-45

-10

-40

ns

-100

-80

-30

© 1998 Fairchild Semiconductor Corporation

PN2907A / MMBT2907A / PZT2907A Rev. 1.1.1

3

www.fairchildsemi.com

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