PN2907A Ver la hoja de datos (PDF) - Fairchild Semiconductor

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Fabricante

PN2907A

60 V PNP General Purpose Transistor

Fairchild Semiconductor 

Absolute Maximum Ratings(1)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Ratings

Units

VCEO

VCBO

VEBO

IC

TJ, TSTG(2)

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

Operating and Storage Junction Temperature Range

-60

V

-60

V

-5.0

V

-800

mA

-55 to + 150

°C

Notes:

1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

These ratings are based on a maximum junction temperature of 150 °C.

These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed

or low duty-cycle operations.

2. All voltages (V) and currents (A) are negative polarity for PNP Transistors.

Thermal Characteristics(3)

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

PN2897A

Max.

MMBT2907A

PZT2907A

Total Device Dissipation

PD

Derate above 25°C

625

350

1000

5.0

2.8

8.0

RθJC Thermal Resistance, Junction to Case

83.3

RθJA Thermal Resistance, Junction to Ambient

200

357

125

Note:

3. PCB size FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Units

mW

mW/°C

°C/W

°C/W

© 1998 Fairchild Semiconductor Corporation

PN2907A / MMBT2907A / PZT2907A Rev. 1.1.1

2

www.fairchildsemi.com

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