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MPSA56

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

Zetex => Diodes 

PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 2 – FEB 94

FEATURES

* 80 Volt VCEO

* Gain of 50 at IC=100mA

MPSA56

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at Tamb=25°C

Operating and Storage Temperature Range

SYMBOL

VCBO

VCEO

VEBO

IC

Ptot

Tj:Tstg

E-Line

TO92 Compatible

VALUE

-80

-80

-4

-500

750

-55 to +175

UNIT

V

V

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL MIN. TYP. MAX.

Collector-Base

Breakdown Voltage

V(BR)CBO -80

Collector-Emitter

Breakdown Voltage

V(BR)CEO -80

Emitter-Base

Breakdown Voltage

V(BR)EBO -4

Collector Cut-Off

ICBO

-0.1

Current

Collector Cut-Off

ICES

-0.1

Current

UNIT

V

V

V

µA

µA

CONDITIONS.

IC=-100µA, IE=0

IC=-1mA, IB=0*

IE=-100µA, IC=0

VCB=-80V, IE=0

VCE=-60V

Collector-Emitter

Saturation Voltage

VCE(sat)

-0.25 V

Base-Emitter

Turn-On Voltage

VBE(on)

-1.2 V

Static Forward Current hFE

50

Transfer Ratio

50

Transition

Frequency

fT

100

MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

IC=-100mA, IB=-10mA*

IC=-100mA, VCE=-1V*

IC=-10mA, VCE=1V*

IC=-100mA, VCE=1V*

IC=-10mA, VCE=-2V

f=100MHz

3-81

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