MPSA56 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
MPSA56 Datasheet PDF : 15 Pages
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MPSA56
MMBTA56
PZTA56
C
BE
TO-92
C
SOT-23
Mark: 2G
E
B
C
SOT-223
E
C
B
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 73.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current - Continuous
TJ, Tstg
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
80
80
4.0
500
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
MPSA56
*MMBTA56
PD
Total Device Dissipation
Derate above 25°C
625
350
5.0
2.8
RθJC
Thermal Resistance, Junction to Case
83.3
RθJA
Thermal Resistance, Junction to Ambient
200
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**PZTA56
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
1997 Fairchild Semiconductor Corporation
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