BZT55C4V3 Ver la hoja de datos (PDF) - Temic Semiconductors
Número de pieza
componentes Descripción
Fabricante
BZT55C4V3 Datasheet PDF : 6 Pages
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TELEFUNKEN Semiconductors
BZT55C...
Typical Characteristics (Tj = 25_C unless otherwise specified)
600
1000
500
Tj = 25°C
400
100
300
IZ=5mA
200
10
100
0
0
95 9602
40
80
120 160 200
Tamb – Ambient Temperature ( °C )
Figure 1 : Total Power Dissipation vs. Ambient Temperature
1
0
5
10
15
20
25
95 9598
VZ – Z-Voltage ( V )
Figure 2 : Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
1.3
VZtn=VZt/VZ(25°C)
1.2
TKVZ=10 10–4/K
8 10–4/K
6 10–4/K
1.1
4 10–4/K
2 10–4/K
1.0
0
–2 10–4/K
–4 10–4/K
0.9
15
10
5
IZ=5mA
0
0.8
–60
95 9599
0
60
120 180 240
Tj – Junction Temperature ( °C )
Figure 3 : Typical Change of Working Voltage vs. Junction
Temperature
–5
0
10
20 30
40
50
95 9600
VZ – Z-Voltage ( V )
Figure 4 : Temperature Coefficient of Vz vs. Z–Voltage
200
100
150
VR = 2V
Tj = 25°C
100
50
0
0
5
10
15
20
25
95 9601
VZ – Z-Voltage ( V )
Figure 5 : Diode Capacitance vs. Z–Voltage
Rev. A1: 12.12.1994
10
Tj = 25°C
1
0.1
0.01
0.001
0
95 9605
0.2
0.4
0.6
0.8 1.0
VF – Forward Voltage ( V )
Figure 6 : Forward Current vs. Forward Voltage
3
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