BZT55C4V3 Ver la hoja de datos (PDF) - Temic Semiconductors
Número de pieza
componentes Descripción
Fabricante
BZT55C4V3 Datasheet PDF : 6 Pages
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TELEFUNKEN Semiconductors
Silicon Epitaxial Planar Z–Diodes
Features
D Very sharp reverse characteristic
D Low reverse current level
D Very high stability
D Low noise
D Available with tighter tolerances
Applications
Voltage stabilization
BZT55C...
94 9373
Absolute Maximum Ratings
Tj = 25_C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
RthJAx300K/W
Type
Symbol
Value
Unit
PV
500
mW
IZ
PV/VZ
mA
Tj
175
°C
Tstg
–65...+175
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
Symbol
Value
Unit
on PC board 50mmx50mmx1.6mm
RthJA
500
K/W
Characteristics
Tj = 25_C
Parameter
Forward voltage
Test Conditions
IF=200mA
Type Symbol Min
Typ
Max Unit
VF
1.5
V
Rev. A1: 12.12.1994
1
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