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IL4116_04 Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Fabricante
IL4116_04 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Coupler
Parameter
Lead soldering temperature
Creepage distance
Clearance
Storage temperature
Operating temperature
Isolation test voltage
Isolation resistance
Test condition
5 sec.
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
IL4116/ IL4117/ IL4118
Vishay Semiconductors
Symbol
Tsld
Tstg
Tamb
VIO
RIO
RIO
Value
260
7.0
7.0
- 55 to + 150
- 55 to + 100
5300
1012
1011
Unit
°C
mm
mm
°C
°C
VRMS
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Tamb=25°C
Parameter
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance, junction to
lead
Test condition
IF = 20 mA
IR = 10 µA
VR = 6.0 V
VF = 0 V, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
VF
1.3
1.5
V
VBR
6.0
30
V
IR
0.1
10
µA
CO
40
pF
Rthjl
750
°C/W
Output
Parameter
Test condition
Repetitive peak off-state voltage IDRM = 100 µA
Off-state voltage
ID(RMS) = 70 µA
Off-state current
On-state voltage
On-state current
Surge (non-repetitive, on-state
current)
Holding current
Latching current
LED trigger current
Zero cross inhibit voltage
Critical state of rise: off-state
voltage
VD = 600, Tamb = 100 °C
IT = 300 mA
PF = 1.0, VT(RMS) = 1.7 V
f = 50 Hz
VT = 3.0 V
VT = 2.2 V
VAK = 5.0 V
IF = Rated IFT
VRM, VDM = 400 VAC
VRM, VDM = 400 VAC,
Tamb = 80 °C
Part
IL4116
IL4117
IL4118
IL4116
IL4117
IL4118
Symbol
VDRM
VDRM
VDRM
VD(RMS)
VD(RMS)
VD(RMS)
ID(RMS)
VTM
ITM
ITSM
IH
IL
IFT
VIH
dV(MT)/dt
dV(MT)/dt
Min
Typ.
600
650
700
750
800
850
424
460
494
536
565
613
10
1.7
65
5.0
0.7
15
10,000
2000
Max
100
3.0
300
3.0
200
1.3
25
Unit
V
V
V
V
V
V
µA
V
mA
A
µA
mA
mA
V
V/µs
V/µs
Document Number 83628
Rev. 1.4, 26-Apr-04
www.vishay.com
3

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