2SC2884 Ver la hoja de datos (PDF) - MAKO SEMICONDUCTOR CO.,LIMITED

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2SC2884

Plastic-Encapsulate Transistors

MAKO SEMICONDUCTOR CO.,LIMITED 

Plastic-Encapsulate Transistors

FEATURES

• Suitable for output stage of 3 watts amplifier.

• High DC current gain.

• Small flat package.

• PC=1.0 to 2.0W.

• Complements the 2SA1204.

2SC2884 (NPN)

Maximum Ratings (Ta=25 unless otherwise noted)

Parameter

Symbol

Collector-Base Voltage

MAKO

VCBO

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Semiconductor

VCEO

VEBO

IC

Collector Power dissipation

Co.P, C

Junction Temperature

Storage Temperature

TTstJgLimited

Value

35

30

5

0.8

0.5

150

-55to +150

Unit

V

V

V

A

W

1. BASE

2. COLLECTO

3. EMITTER

SOT-89

ELECTRICAL CHARACTERISTICS ( @ Ta=25

Parameter

Collector-emitter breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Symbol

VCEO

ICBO

IEBO

hFE

VCE(sat)

VBE

unTl4ee0s0ss8t-oc3to7h8ne-dr8w7it3iiosensspecified)

IC=10mA,IB=0

Min Typ

35

VVVICCCE=BEB0===.5513AVV5V,,,III,CCIB==E==10000.00m2htAAtp://www.makos1em0i0.hk/

VCE=1V, IC=10mA

0.5

Transition frequency

fT

VCE=5V,Ic=10mA

120

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

13

Max Unit

V

0.1 μA

0.1 μA

320

0.5 V

0.8 V

MHz

pF

CLASSIFICATION OF hFE

Rank

Range

Marking

O

100-200

PO1

Y

160-320

PY1

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/

Page:P2-P1

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