2SC2884 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor
Número de pieza
componentes Descripción
Fabricante
2SC2884 Datasheet PDF : 3 Pages
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Production specification
NPN Silicon Epitaxial Planar Transistor
2SC2884
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0
30
V
Collector cut-off current
ICBO
VCB=35V,IE=0
0.1 μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1 μA
DC current gain
VCE=1V,IC=100mA
100
320
hFE
VCE=1V,IC=700mA
35
Collector-emitter saturation voltage VCE(sat) IC=0.5A, IB=0.02A
Base-emitter voltage
VBE
VCE=1V, IC=10mA
0.5
0.5 V
0.8 V
Transition frequency
fT
VCE=5V,Ic=10mA
120
MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
13
pF
CLASSIFICATION OF hFE
Rank
Range
MARKING
O
100-200
PO1
Y
160-320
PY1
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
E052
Rev.A
www.gmicroelec.com
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