2SD1253A_ Ver la hoja de datos (PDF) - Panasonic Corporation
Número de pieza
componentes Descripción
Fabricante
2SD1253A_ Datasheet PDF : 2 Pages
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Power Transistors
50
45
40
(1)
35
PC — Ta
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
30
25
20
15
10
5 (2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
–6
IB=–120mA TC=25˚C
–5
–100mA
–80mA
–4
–60mA
–3
–40mA
–2
–20mA
–10mA
–1
–8mA
–5mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SB930, 2SB930A
IC — VBE
–10
VCE=–4V
–8
25˚C
–6
TC=100˚C –25˚C
–4
–2
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
25˚C
TC=100˚C
–25˚C
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
Collector current IC (A)
10000
3000
hFE — IC
VCE=–4V
1000
300 TC=100˚C
25˚C
100
–25˚C
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
Collector current IC (A)
10000
3000
1000
fT — IC
VCE=–5V
f=1MHz
TC=25˚C
300
100
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
Collector current IC (A)
Area of safe operation (ASO)
–100
–30
Non repetitive pulse
TC=25˚C
–10 ICP
–3 IC
–1
– 0.3
– 0.1
10ms
t=1ms
300ms
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
Rth(t) — t
103
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
102
(1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
2
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