MBRF20100CT Ver la hoja de datos (PDF) - Diode Semiconductor Korea
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MBRF20100CT Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
MBRF2070CT - - - MBRF20100CT
FIG.1 -- FORWARD CURRENT DERATING CURVE
25
Resistive or inductive Load
20
15
10
5
0
0
50
100
150
CASE TEMPERATURE
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD
11111vCHARACTERISTICS PER LEG
40
10
TJ=125
1
0.1
Pulse Width=300µs
1% Duty Cycle
TJ=25
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.2 -- MAXIMUM NON-REPETITIVE PEAK
cc
FORWARD SURGE CURRENT PERLEG
175
150
TJ=TJmax
8.3ms Single Half Sine Wave
(JEDEC Method)
125
100
75
50
25
1
10
1 00
NUMBER OF CYCLES AT 60Hz
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
bn
PER LEG
111
40
10
TJ=125
1
0.1
TJ=75
0.01
0.001
0
TJ=25
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,
1FIG.5--TYPICAL JUNCTION CAPACITANCE PER LEG
4000
1000
TJ=25
f=1.0MHz
Vsig=50MVp-p
100
100.1
1
10
100
REVERSE VOLTAGE,VOLTS
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