7N60 Ver la hoja de datos (PDF) - DIYI Electronic Technology Co., Ltd.
Número de pieza
componentes Descripción
Fabricante
7N60 Datasheet PDF : 9 Pages
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THERMAL DATA
PARAMETER
TO-220/ITO-220
Junction to Ambient
TO-262/TO-263
TO-251/ TO-252
TO-220/TO-262/TO-263
Junction to Case
ITO-220
TO-251/ TO-252
SYMBOL
θJA
θJC
7N60
600V N-Channel Power MOSFET
RATING
62.5
160
1.25
3.5
2.5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 600V, VGS = 0V
MIN TYP MAX UNIT
600
V
1 μA
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 3.7A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
tD(ON)
tR
tD(OFF)
VDD = 300V, ID =7A,
RG = 25Ω (Note 1, 2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VDS= 480V,ID= 7A,
VGS= 10V (Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS=0V,IS=7A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
trr
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
VGS = 0 V, IS = 7A,
dIF/dt = 100 A/ μs (Note 1)
2. Essentially independent of operating temperature
100 nA
-100 nA
0.67
V/°С
2.0
4.0 V
0.83 1.0 Ω
1200 1400 pF
125 155 pF
40 50 pF
65 95 ns
180 210 ns
320 360 ns
220 260 ns
210 230 nC
11
nC
38
nC
1.4 V
7A
25 A
320
ns
2.4
μC
Mar.2015-REV.00
www.dyelec.com
2/9
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