7N60 Ver la hoja de datos (PDF) - Zibo Seno Electronic Engineering Co.,Ltd
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7N60 Datasheet PDF : 7 Pages
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Z ibo Seno Electronic Engineering Co., Ltd.
TYPICAL CHARACTERISTICS(Cont.)
7N60 7N65
Power MOSFET
Transient Thermal Response Curve
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
Notes:
1. θJC (t) = 1.18°C/W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM×θJC (t)
10-5 10-4 10-3
10-2 10-1 100 101
Square Wave Pulse Duration, t1 (sec)
Maximum Drain Current vs. Case
Temperature
7.5
6.25
5.0
3.75
2.5
1.25
0
25 50 75 100 125 150
Case Temperature, TC (°C)
Safe Operating Area – 600V
Operation in This Area is Limited by RDS(on)
101
100
10-1
Notes:
1. TJ=25°C
2. TJ=150°C
3. Single Pulse
100µs
1ms
10ms
DC
10-2
100
7N60 7N65
101
102
600103
Drain-Source Voltage, VDS (V)
7 of 7
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