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componentes Descripción

Fabricante

BC859C_11

Surface Mount General Purpose Si-Epi-Planar Transistors

Diotec Semiconductor Germany  

BC856 ... BC860

Characteristics (Tj = 25°C)

Base-Emitter-voltage – Basis-Emitter-Spannung 2)

- VCE = 5 V, IC = - 2 mA

- VCE = 5 V, IC = - 10 mA

- VBE

- VBE

Collector-Base cutoff current – Kollektor-Basis-Reststrom

- VCB = 30 V, (E open)

- VCE = 30 V, Tj = 125°C, (E open)

- ICBO

- ICBO

Emitter-Base cutoff current

- VEB = 5 V, (C open)

Gain-Bandwidth Product – Transitfrequenz

- IEBO

- VCE = 5 V, - IC = 10 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 10 V, IE =ie = 0, f = 1 MHz

CCBO

Emitter-Base Capacitance – Emitter-Basis-Kapazität

- VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEB0

Noise figure – Rauschzahl

- VCE = 5 V, - IC = 200 µA

RG = 2 kΩ, f = 1 kHz, Δf = 200 Hz

BC856 ... BC858 F

BC859 ... BC860 F

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

Marking of available current gain groups

Stempelung der lieferbaren

Stromverstärkungsgruppen

BC856A = 3A

BC856B = 3B

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

600 mV

–

750 mV

–

–

720 mV

–

–

15 nA

–

–

4 µA

–

–

100 nA

100 MHz

–

–

–

–

4.5 pF

–

9 pF

–

–

2 dB

10 dB

–

1.2 dB

4 dB

< 420 K/W 1)

BC846 ... BC850

BC857A = 3E

BC857B = 3F

BC857C = 3G

BC858A = 3E

BC858B = 3F

BC858C = 3G

BC860B = 3F

BC860C

= 3G or 4G

BC859B = 3F

BC859C

= 3G or 4C

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

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