IXTH24P20 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXTH24P20 Datasheet PDF : 2 Pages
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IXTH 24P20
Symbol
gfs
Ciss
C
oss
Crss
t
d(on)
tr
t
d(off)
tf
Q
g(on)
Qgs
Q
gd
R
thJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = -10 V; ID = ID25, pulse test
6 12
S
4200
pF
VGS = 0 V, VDS = -25 V, f = 1 MHz
1200
pF
340
pF
36
ns
VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
29
ns
RG = 4.7 Ω (External)
68
ns
28
ns
150
nC
VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
36
nC
70
nC
0.42 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0
I
SM
Repetitive; pulse width limited by TJM
V
SD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = IS, di/dt = 100 A/µs, VR = -50 V
-24 A
-96 A
-3 V
250
ns
TO-247 AD Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2
2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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