BD242BFP Ver la hoja de datos (PDF) - STMicroelectronics
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BD242BFP Datasheet PDF : 4 Pages
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BD241BFP / BD242BFP
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
5.3
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEO
Collector Cut-off
Current (IB = 0)
ICES Collector Cut-off
Current (VBE = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VCE = 60 V
VCE = 80 V
VEB = 5 V
IC = 30 mA
IC = 3 A
IB = 0.6 A
VBE(ON)∗ Base-Emitter Voltage IC = 3 A
VCE = 4 V
hFE* DC Current Gain
IC = 1 A
IC = 3 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
For PNP types voltage and current values are negative.
VCE = 4 V
VCE = 4 V
Min. Typ.
80
25
10
Max.
0.3
0.2
1
1.2
1.8
Unit
mA
mA
mA
V
V
V
Safe Operating Area
2/4
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