MJ1000 Ver la hoja de datos (PDF) - Comset Semiconductors
Número de pieza
componentes Descripción
Fabricante
MJ1000 Datasheet PDF : 4 Pages
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MJ900 – MJ901 PNP
MJ1000 – MJ1001 NPN
Symbol
Ratings
MJ900
IB
Base Current
MJ1000
MJ901
MJ1001
@ TC < 25° MJ900
PT
Power Dissipation
MJ1000
Derate above MJ901
25°C
MJ1001
MJ900
TJ
Junction Temperature
MJ1000
MJ901
MJ1001
MJ900
TS
Storage Temperature
MJ1000
MJ901
MJ1001
THERMAL CHARACTERISTICS
Value
Unit
0.1
90
0.515
Adc
Watts
W/°C
-65 to +200 °C
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
MJ900
MJ1000
MJ901
MJ1001
Value
1.94
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
VCEO
Collector-Emitter
Breakdown Voltage (*)
ICEO
Collector Cutoff Current
Test Condition(s)
IC=100 mAdc, IB=0
MJ900
MJ1000
MJ901
MJ1001
VCE=30 Vdc, IB=0
MJ900
MJ1000
VCE=40 Vdc, IB=0
MJ901
MJ1001
Min Typ Mx
60 - -
80 - -
--
500
--
Unit
Vdc
µAdc
Page 2 of 4
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