MGP11N60ED Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

MGP11N60ED

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

ON Semiconductor 

MGP11N60ED

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–to–Emitter Breakdown Voltage

(VGE = 0 Vdc, IC = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)CES

600

—

—

870

Vdc

—

—

mV/°C

Zero Gate Voltage Collector Current

(VCE = 600 Vdc, VGE = 0 Vdc)

(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)

ICES

IGES

µAdc

—

—

10

—

—

200

—

—

50

µAdc

ON CHARACTERISTICS (1)

Collector–to–Emitter On–State Voltage

(VGE = 15 Vdc, IC = 4.0 Adc)

(VGE = 15 Vdc, IC = 4.0 Adc, TJ = 125°C)

(VGE = 15 Vdc, IC = 8.0 Adc)

Gate Threshold Voltage

(VCE = VGE, IC = 1.0 mAdc)

Threshold Temperature Coefficient (Negative)

VCE(on)

Vdc

—

1.6

1.9

—

1.5

—

—

2.0

2.4

VGE(th)

Vdc

4.0

6.0

8.0

—

10

—

mV/°C

Forward Transconductance (VCE = 10 Vdc, IC = 8.0 Adc)

gfe

—

3.5

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VCE = 25 Vdc, VGE = 0 Vdc,

f = 1.0 MHz)

Cies

Coes

Cres

—

779

—

pF

—

81

—

—

13

—

SWITCHING CHARACTERISTICS (1)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Turn–Off Switching Loss

Turn–On Switching Loss

Total Switching Loss

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Turn–Off Switching Loss

Turn–On Switching Loss

Total Switching Loss

Gate Charge

(VCC = 360 Vdc, IC = 8.0 Adc,

VGE = 15 Vdc, L = 300 mH,

RG = 20 Ω)

Energy losses include “tail”

(VCC = 360 Vdc, IC = 8.0 Adc,

VGE = 15 Vdc, L = 300 mH

RG = 20 Ω, TJ = 125°C)

Energy losses include “tail”

(VCC = 360 Vdc, IC = 8.0 Adc,

VGE = 15 Vdc)

td(on)

tr

td(off)

tf

Eoff

Eon

Ets

td(on)

tr

td(off)

tf

Eoff

Eon

Ets

QT

Q1

Q2

—

46

—

ns

—

34

—

—

102

—

—

226

—

—

0.32

0.40

mJ

—

0.11

—

—

0.43

—

—

42

—

ns

—

26

—

—

214

—

—

228

—

—

0.48

—

mJ

—

0.16

—

—

0.64

—

—

39.2

—

nC

—

8.7

—

—

17.4

—

DIODE CHARACTERISTICS

Diode Forward Voltage Drop

(IEC = 3.25 Adc)

(IEC = 3.25 Adc, TJ = 125°C)

(IEC = 6.5 Adc)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

VFEC

Vdc

—

1.63

—

—

1.24

—

1.7

2.0

2.3

(continued)

2

Motorola IGBT Device Data

Share Link: