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MGP11N60E_D

Insulated Gate Bipolar Transistor

Motorola => Freescale 

MGP11N60E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–to–Emitter Breakdown Voltage

(VGE = 0 Vdc, IC = 25 µAdc)

Temperature Coefficient (Positive)

BVCES

600

—

—

870

Vdc

—

—

mV/°C

Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)

Zero Gate Voltage Collector Current

(VCE = 600 Vdc, VGE = 0 Vdc)

(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)

BVECS

15

—

—

Vdc

ICES

µAdc

—

—

10

—

—

200

IGES

—

—

50

mAdc

ON CHARACTERISTICS (1)

Collector–to–Emitter On–State Voltage

(VGE = 15 Vdc, IC = 4.0 Adc)

(VGE = 15 Vdc, IC = 4.0 Adc, TJ = 125°C)

(VGE = 15 Vdc, IC = 8.0 Adc)

Gate Threshold Voltage

(VCE = VGE, IC = 1.0 mAdc)

Threshold Temperature Coefficient (Negative)

VCE(on)

Vdc

—

1.6

1.9

—

1.5

—

—

2.0

2.4

VGE(th)

Vdc

4.0

6.0

8.0

—

10

—

mV/°C

Forward Transconductance (VCE = 10 Vdc, IC = 8.0 Adc)

gfe

—

3.5

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VCE = 25 Vdc, VGE = 0 Vdc,

f = 1.0 MHz)

Cies

Coes

Cres

—

779

—

pF

—

81

—

—

13

—

SWITCHING CHARACTERISTICS (1)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Turn–Off Switching Loss

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Turn–Off Switching Loss

Gate Charge

(VCC = 360 Vdc, IC = 8.0 Adc,

VGE = 15 Vdc, L = 300 mH,

RG = 20 Ω, TJ = 25°C)

Energy losses include “tail”

(VCC = 360 Vdc, IC = 8.0 Adc,

VGE = 15 Vdc, L = 300 mH

RG = 20 Ω, TJ = 125°C)

Energy losses include “tail”

(VCC = 360 Vdc, IC = 8.0 Adc,

VGE = 15 Vdc)

td(on)

tr

td(off)

tf

Eoff

td(on)

tr

td(off)

tf

Eoff

QT

Q1

Q2

—

46

—

ns

—

34

—

—

102

—

—

226

—

—

0.32

—

mJ

—

42

—

ns

—

26

—

—

214

—

—

228

—

—

0.48

—

mJ

—

39.2

—

nC

—

8.7

—

—

17.4

—

INTERNAL PACKAGE INDUCTANCE

Internal Emitter Inductance

LE

(Measured from the emitter lead 0.25″ from package to emitter bond pad)

nH

—

7.5

—

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

2

Motorola TMOS Power MOSFET Transistor Device Data

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