SI1032X-T1-GE3 Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI1032X-T1-GE3 Datasheet PDF : 9 Pages
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Si1032R/X
Vishay Siliconix
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
0.40
0.7
1.2
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
IGSS
IDSS
VDS = 0 V, VGS = ± 2.8 V
VDS = 0 V, VGS = ± 4.5 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
± 0.5
± 1.0
± 1.0
± 3.0
µA
1
10
On-State Drain Currenta
ID(on)
VDS = 5 V, VGS = 4.5 V
250
mA
VGS = 4.5 V, ID = 200 mA
5
Drain-Source On-State Resistancea RDS(on)
VGS = 2.5 V, ID = 175 mA
VGS = 1.8 V, ID = 150 mA
7
9
VGS = 1.5 V, ID = 40 mA
Forward Transconductancea
gfs
VDS = 10 V, ID = 200 mA
Diode Forward Voltagea
VSD
IS = 150 mA, VGS = 0 V
Dynamicb
10
0.5
S
1.2
V
Total Gate Charge
Qg
750
Gate-Source Charge
Qgs
VDS = 10 V, VGS = 4.5 V, ID = 250 mA
75
pC
Gate-Drain Charge
Qgd
225
Turn-On Delay Time
td(on)
50
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 10 V, RL = 47
ID 200 mA, VGEN = 4.5 V, Rg = 10
25
ns
50
Fall Time
tf
25
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
0.5
600
VGS = 5 V thru 1.8 V
500
0.4
400
0.3
300
0.2
200
TJ = - 55 °C
25 °C
125 °C
0.1
0.0
0
1V
1
2
3
4
5
6
VDS - Drain-to-Source Voltage (V)
Output Characteristics
100
0
0.0
0.5
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
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2
Document Number: 71172
S10-2544-Rev. F, 08-Nov-10
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