ATF-34143 Ver la hoja de datos (PDF) - Agilent Technologies, Inc
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ATF-34143 Datasheet PDF : 15 Pages
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ATF-34143 Power Parameters tuned for Power, VDS = 4 V, IDSQ = 120 mA
Freq
P1dB
Id
(GHz) (dBm) (mA)
G1dB
(dB)
PAE1dB
(%)
P3dBm
(dBm)
Id
(mA)
PAE3dB
(%)
Gamma
Out_mag
(Mag)
0.9
20.9
114
25.7
27
22.8
108
44
0.34
1.5
21.7
115
21.9
32
23.1
95
53
0.31
1.8
21.3
111
20.5
30
23.0
105
47
0.30
2
22.0
106
19.5
37
23.7
115
50
0.28
4
22.7
110
12.7
40
23.6
111
47
0.26
6
23.3
115
9.2
41
24.2
121
44
0.24
Gamma
Out_ang
(Degrees)
136
152
164
171
-135
-66
ATF-34143 Power Parameters tuned for Power, VDS = 4 V, IDSQ = 60 mA
Freq
P1dB
Id
(GHz) (dBm) (mA)
G1dB
(dB)
PAE1dB
(%)
P3dBm
(dBm)
Id
(mA)
PAE3dB
(%)
Gamma
Out_mag
(Mag)
0.9
18.2
75
27.5
22
20.5
78
36
0.48
1.5
18.7
58
24.5
32
20.8
59
51
0.45
1.8
18.8
57
23.0
33
21.1
71
45
0.42
2
18.8
59
22.2
32
21.9
81
47
0.40
4
20.2
66
13.9
38
22.0
77
48
0.25
6
21.2
79
9.9
37
23.5
102
46
0.18
Gamma
Out_ang
(Degrees)
102
117
126
131
-162
-77
80
50
40
30
20
10
Pout
0
Gain
PAE
-10
-30 -20 -10
0
10 20
Pin (dBm)
Figure 20. Swept Power Tuned for
Power at 2 GHz, VDS = 4 V, I DSQ = 120 mA.
80
60
40
20
0
Pout
Gain
PAE
-20
-30 -20 -10
0
10 20
Pin (dBm)
Figure 21. Swept Power Tuned for
Power at 2 GHz, VDS = 4 V, I DSQ = 60 mA.
Notes:
1. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device
is running closer to class B as power output approaches P1dB. This results in higher PAE (power added efficiency) when compared to
a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V and
IDSQ␣ =␣ 10␣ mA, Id increases to 62 mA as a P1dB of +19 dBm is approached.
2. PAE(%) = ((Pout – Pin) / Pdc) x 100
3. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
6
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