MCR101 Ver la hoja de datos (PDF) - New Jersey Semiconductor
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MCR101 Datasheet PDF : 2 Pages
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MCR101 thru MCR104
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
Max
Unit
R<uc
75
°c/w
RflJA
200
°c/w
ELECTRICAL CHARACTERISTICS (RGK = 1000 Ohms)
Characteristic
Peak Forward Blocking Voltage (Note 1 )
(Tc = 85°C)
MCR101
MCR102
MCR103
MCR104
Symbol
VDRM
Min
Max
Unit
Volts
15
30
60
—
100
Peak Forward or Reverse Blocking Current
(Rated VDRM or VRRM) Tc = 25°C
TC = 85°C
IDRM. 'RRM
—
10
MA
100
uA
Forward "On" Voltage (Note 2)
(IjM = 1 A peak @ TA = 25°C)
Gate Trigger Current (Continuous dc) (Note 3)
(Anode Voltage = 7 Vdc, R|_ = 100 Ohrnsl
Gate Trigger Voltage (Continuous dc)
(Anode Voltage - 7 Vdc, RL » 100 Ohms)
TC = 25°C
TC = 25"C
Tc = -65°C
TC = 85°C
VTM
—
1.7
Volts
IGT
—
200
MA
VQT
0.8
Volts
VGD
1.2
0.1
Holding Current
TC - 25°C
(Anode Voltage = 7 Vdc, initiating current = 20 mA) TC = -65°C
IH
—
5
mA
10
Notes: 1, VQRM flnd VRRM f°r 8" types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate
voltage but positive gate voltage shall not be applied concurrently with a negative potential on the anode. Whan checking forward or
reverse blocking capability, thyristor devices should not be tested with a constant current source in a manner that the voltage applied
exceeds the rated blocking voltage
2. Forward current applied for 1 ms maximum duration, duty cycle % 1%,
3. RQK current is not included in measurement.
FIGURE 1 -CURRENT DERATING
(REFERENCE: CASETEMPERATURE)
FIGURE 2 - CURRENT DERATING
(REFERENCE: AMBIENT TEMPERATURE)
0I
02
0.3
0.4
IflAVI. AVERAGE FORWARD CURRENT IAMP)
I. A V E R A G E F O R W A R D CURRENT (AMPI
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