STTA812G(1999) Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STTA812G Datasheet PDF : 10 Pages
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STTA812D/DI/G
Fig. 1: Conductionlosses versus average current. Fig. 2: Forward voltage drop versus forward cur-
rent (maximum values).
P1(W)
IFM(A)
20
δ = 0.1
δ = 0.2 δ = 0.5
18
100.0
Tj=125°C
16
14
δ=1
10.0
12
10
8
6
1.0
4
2
IF(av) (A)
VFM(V)
0
0
2
4
6
0.1
8
10
0.0
1.0
2.0
3.0
4.0
5.0
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 4: Peak reverse recovery current versus
dIF/dt (90% confidence).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6
δ = 0.5
0.4
0.2
δ = 0.2
δ = 0.1
Single pulse
0.0
1E-4
1E-3
tp(s)
1E-2
1E-1
1E+0
IRM(A)
50
VR=600V
40 Tj=125°C
30
20
10
0
0
100
IF=2*IF(av)
IF=IF(av)
dIF/dt(A/µs)
200
300
IF=0.5*IF(av)
400
500
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence).
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical
values).
trr(ns)
550
500
450
400
350
300
250
200
150
100
50
0
0
100
IF=2*IF(av)
VR=600V
Tj=125°C
IF=IF(av)
IF=0.5*IF(av)
dIF/dt(A/µs)
200
300
400
500
S factor
1.40
1.20
1.00
0.80
0
100
dIF/dt(A/µs)
200
300
VR=600V
IF<2*IF(av)
Tj=125°C
400
500
3/10
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