C3153 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

Número de pieza

componentes Descripción

Fabricante

C3153

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A

VBEsat Base-emitter saturation voltage

IC=3A ;IB=0.6A

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=0.4A ; VCE=5V

hFE -2

DC current gain

IC=2A ; VCE=5V

COB

Output capacitance

IE=0 ; VCB=10V;f=1MHz

fT

Transition frequency

IC=0.4A ; VCE=10V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=4A;IB1=0.8A;IB2=-1.6A

RL=100Ω,VCC=400V

‹ hFE-1 classifications

K

L

10-20

15-30

M

20-40

Product Specification

2SC3153

MIN TYP. MAX UNIT

800

V

900

V

7

V

2.0

V

1.5

V

10

μA

10

μA

10

40

8

120

pF

15

MHz

1.0

μs

3.0

μs

0.7

μs

2

Share Link: