SSTA28T116_ Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
SSTA28T116_ Datasheet PDF : 3 Pages
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Transistors
SSTA28 / MMSTA28
NPN general purpose transistor
SSTA28 / MMSTA28
zFeatures
1) BVCES < 80V (Ic=100µA)
zPackage, marking and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
SSTA28
SST3
RAT
T116
3000
MMSTA28
SMT3
RAT
T146
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
80
80
12
0.3
0.2
150
−55 to +150
Unit
V
V
V
A
W
°C
°C
zExternal dimensions (Unit : mm)
SSTA28
ROHM : SST3
JEDEC : SOT-23
2.9±0.2
1.9±0.2
0.95 0.95
0.95
+0.2
−0.1
0.45±0.1
(1)
(2)
0~0.1
0.2Min.
(3)
0.4
+0.1
−0.05
0.15
+0.1
−0.06
All terminals have same dimensions
(1) Emitter
(2) Base
(3) Collector
MMSTA28
2.9±0.2
1.9±0.2
0.95 0.95
(1)
(2)
1.1
+0.2
−0.1
0.8±0.1
0~0.1
(3)
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
0.4
+0.1
−0.05
0.15
+0.1
−0.06
All terminals have same dimensions
(1) Emitter
(2) Base
(3) Collector
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
BVCBO
BVCES
BVEBO
ICBO
IBEO
ICES
VCE(sat) 1
VCE(sat) 2
VBE(on)
DC current transfer ratio
hFE
Transition frequency
Output Capecitance
fT
COb
Min.
80
80
12
−
−
−
−
−
−
10000
10000
125
−
Typ.
−
−
−
−
−
−
0.7
0.8
1.4
−
−
200
5.0
Max.
−
−
−
0.1
0.1
0.5
1.2
1.5
2.0
−
−
−
8.0
Unit
V
V
V
µA
µA
µA
V
V
V
−
MHz
pF
Conditions
IC = 100µA
IC = 100µA
IE = 10µA
VCB = 60V
VEB = 10V
VCE = 10V
IC/IB = 10mA/10µA
IC/IB = 100mA/0.1mA
VCE/IB = 5V/100mA
VCE = 5V , IC = 10mA
VCE = 5V , IC = 100mA
VCE = 5V , IE = 10mA , f = 100MHz
VCB = 10V , IE = 0 , f = 1MHz
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