B596R Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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Fabricante

B596R

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0

V(BR)EBO Emitter-base breakdown votage

IE=-10mA; IC=0

VCEsat Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A

VBE

Base-emitter on voltage

IC=-3A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-80V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-0.5A ; VCE=-5V

hFE-2

DC current gain

IC=-3A ; VCE=-5V

fT

Transition frequency

IC=-0.5A ; VCE=-5V

COB

Output capacitance

IE=0; VCB=-10V;f=1MHz

‹ hFE-1 classifications

R

O

Y

40-80

70-140 120-240

Product Specification

2SB596

MIN TYP. MAX UNIT

-80

V

-5

V

-1.7

V

-1.5

V

-30 μA

-100 μA

40

240

15

3

MHz

130

pF

2

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