BCV26(2001) Ver la hoja de datos (PDF) - Infineon Technologies

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Fabricante

BCV26
(Rev.:2001)

PNP Silicon Darlington Transistors

Infineon Technologies 

BCV26, BCV46

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

V(BR)CEO

IC = 10 mA, IB = 0

BCV26

30

-

BCV46

60

-

V

-

-

Collector-base breakdown voltage

V(BR)CBO

IC = 100 µA, IB = 0

BCV26

40

-

-

BCV46

80

-

-

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

Collector cutoff current

VCB = 30 V, IE = 0

VCB = 60 V, IE = 0

Collector cutoff current

VCB = 30 V, IE = 0 , TA = 150 °C

VCB = 60 V, IE = 0 , TA = 150 °C

BCV26

BCV46

BCV26

BCV46

V(BR)EBO 10

ICBO

-

-

ICBO

-

-

-

-

nA

- 100

- 100

µA

-

10

-

10

Emitter cutoff current

VEB = 4 V, IC = 0

DC current gain 1)

IC = 100 µA, VCE = 1 V

BCV26

BCV46

IEBO

hFE

-

- 100 nA

4000 -

2000 -

-

-

-

DC current gain 1)

IC = 10 mA, VCE = 5 V

hFE

BCV26

10000 -

-

BCV46

4000 -

-

DC current gain 1)

IC = 100 mA, VCE = 5 V

hFE

BCV26

20000 -

-

BCV46

10000 -

-

DC current gain 1)

IC = 0.5 A, VCE = 5 V

hFE

BCV26

4000 -

-

BCV46

2000 -

-

1) Pulse test: t ≤ 300µs, D = 2%

2

Jul-13-2001

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