2SK2111 Ver la hoja de datos (PDF) - KEXIN Industrial

Número de pieza

componentes Descripción

Fabricante

2SK2111

MOS Field Effect Transistor

KEXIN Industrial 

SMD Type

MOS Field Effect Transistor

2SK2111

MOSFICET

Features

Low on-resistance

RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A

High switching speed

SOT-89

4.50+0.1

-0.1

1.80+0.1

-0.1

12 3

0.48+0.1

-0.1

0.53+0.1

-0.1

Unit: mm

1.50+0.1

-0.1

0.44+0.1

-0.1

3.00+0.1

-0.1

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Drain current

Power dissipation *

Channel temperature

Storage temperature

* 16 cm2X0.7mm,ceramic substrate used

Symbol

Rating

Unit

VDSS

60

V

VGSS

20

V

ID

1.0

A

Idp

2.0

A

PD

2.0

W

Tch

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gate threshold voltage

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Symbol

Testconditons

IDSS VDS=60V,VGS=0

IGSS VGS= 20V,VDS=0

VGS(th) VDS=10V,ID=1mA

Yfs VDS=10V,ID=0.5A

VGS=4.0V,ID=0.5A

RDS(on)

VGS=10V,ID=0.5A

Ciss

Coss VDS=10V,VGS=0,f=1MHZ

Crss

td(on)

tr

td(off)

ID=0.5A,VGS(on)=10V,RL=50 ,RG=10

,VDD=25V

tf

1 Gate

11.. SBoauserce

2 Drain

22.. DCroallienctor

333.. GSEmaotuieitrtcere

Min Typ Max Unit

1.0

A

10

A

0.8 1.4 2.0 V

0.4

S

0.32 0.6

0.24 0.45

170

pF

87

pF

32

pF

2.8

ns

2.3

ns

55

ns

27

ns

Marking

Marking

NU

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