2SB1182 Ver la hoja de datos (PDF) - Weitron Technology
Número de pieza
componentes Descripción
Fabricante
2SB1182 Datasheet PDF : 5 Pages
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2SB1182
Typical Characteristics
Ta=25°C
−1
−0.5
IC /IB=10
−0.2
−0.1
−0.05
−5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLETOR CURRENT : IC (mA)
Fig.7 Base-emitter saturation voltage
vs. collector current
300
200
Ta=25°C
Cib
f=1MHz
IE=0A
IC=0A
100
Cob
50
20
10
−0.5 −1 −2
−5 −10 −20 −30
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
500
Ta=25°C
VCE= −5V
200
100
50
5 10 20 50 100 200 500 1000 2000
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
−5
IC Max. (Pulse)
−2 DC
−1
PW=500µs
−0.5
PW=1ms
−0.2
PW=100ms
−0.1
−0.05
Ta=25°C
−0.02
?Single
nonrepetitive
−0.01 pulse
−0.1 −0.2 −0.5 −1 −2
−5 −10 −20 −50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operation area
WEITRON
4/5
http://www.weitron.com.tw
30-Nov-07
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