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M29W320DB70N1E_03 Ver la hoja de datos (PDF) - STMicroelectronics

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M29W320DB70N1E_03 Datasheet PDF : 44 Pages
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M29W320DT
M29W320DB
32 Mbit (4Mb x8 or 2Mb x16, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
s SUPPLY VOLTAGE
– VCC = 2.7V to 3.6V for Program, Erase and
Read
– VPP =12V for Fast Program (optional)
s ACCESS TIME: 70, 90ns
s PROGRAMMING TIME
– 10µs per Byte/Word typical
s 67 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 64 Main Blocks
s PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithms
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s VPP/WP PIN for FAST PROGRAM and WRITE
PROTECT
s TEMPORARY BLOCK UNPROTECTION
MODE
s COMMON FLASH INTERFACE
– 64 bit Security Code
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W320DT: 22CAh
– Bottom Device Code M29W320DB: 22CBh
Figure 1. Packages
TSOP48 (N)
12 x 20mm
FBGA
TFBGA63 (ZA)
63 ball array
May 2003
1/44

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