FM24CL64B Ver la hoja de datos (PDF) - Cypress Semiconductor
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FM24CL64B Datasheet PDF : 18 Pages
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FM24CL64B
64-Kbit (8K × 8) Serial (I2C) F-RAM
64-Kbit (8K × 8) Serial (I2C) F-RAM
Features
■ 64-Kbit ferroelectric random access memory (F-RAM) logically
organized as 8K × 8
❐ High-endurance 100 trillion (1014) read/writes
❐ 151-year data retention (See the Data Retention and
Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■ Fast 2-wire Serial interface (I2C)
❐ Up to 1-MHz frequency
❐ Direct hardware replacement for serial (I2C) EEPROM
❐ Supports legacy timings for 100 kHz and 400 kHz
■ Low power consumption
❐ 100 A (typ) active current at 100 kHz
❐ 3 A (typ) standby current
■ Voltage operation: VDD = 2.7 V to 3.65 V
■ Industrial temperature: –40 C to +85 C
■ Packages
❐ 8-pin small outline integrated circuit (SOIC) package
❐ 8-pin thin dual flat no leads (DFN) package
■ Restriction of hazardous substances (RoHS) compliant
Functional Description
The FM24CL64B is a 64-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by EEPROM and other nonvolatile
memories.
Unlike EEPROM, the FM24CL64B performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. Also, F-RAM exhibits much lower power during writes
than EEPROM since write operations do not require an internally
elevated power supply voltage for write circuits. The
FM24CL64B is capable of supporting 1014 read/write cycles, or
100 million times more write cycles than EEPROM.
These capabilities make the FM24CL64B ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The
combination of features allows more frequent data writing with
less overhead for the system.
The FM24CL64B provides substantial benefits to users of serial
(I2C) EEPROM as a hardware drop-in replacement. The device
specifications are guaranteed over an industrial temperature
range of –40 C to +85 C.
For a complete list of related documentation, click here.
Logic Block Diagram
Counter
Address
Latch
13
SDA
Serial to Parallel
Converter
8
SCL
WP
A2-A0
Control Logic
8Kx8
F-RAM Array
8
Data Latch
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-84458 Rev. *I
• San Jose, CA 95134-1709 • 408-943-2600
Revised April 20, 2017
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